Multiple Perspective of Two Dimensional Materials

Ethan C. Ahn, from (The University of Texas at San Antonio, USA) deliberately discussed about the Two dimensional (2D) materials at the developing stages of electronic and magnetic properties with morphological materials as spintronic devices. 2D materials have gained more attentive for the utilization of inorganic semiconductors applications in this decades. A worldwide space is been occupied with 2D materials with their unique physical perspectives [1]. Scientists and technologists were interested to preface and details about the emerging society of 2D nanomaterials and spintronic devices.

Highlights of 2D materials and their advantages in spin logic switches, spin valves, and spin transistors were specifically examined. They have also introduce the spin-orbit and spin-valley coupled properties of 2D materials to explore their potential to address the crucial issues of contemporary electronics. Finally, they have highlighted the major challenges in integrating 2D materials into spintronic devices and provide a future perspective on 2D materials for spin logic devices.

Figure 1. 2D Materials and their applications.

Detailed representation of 2D materials by Ethan C. Ahn:

Graphene for spin based logic devices.
2D materials for magnetic tunnel junction (MTJ) and transistors.
Spin-orbit coupling in Two dimensional (2D) materials.

The selection of graphene material (a hexagonal 2D representation of sp2 – bonded C-C atoms) is due to the following factors: (1) Long spin diffusion length and lifetime (both experimentally and theoretically analysis) (2) Capability of quick interfaced with other classes of materials.

Upcoming storage devices are based on Multilayer arrangement of magnetic inorganic metals and insulators. High potential response of 2D magnetic materials is very essential for the advance level of novel spintronic devices and their applications. The challenges in intrinsically ferromagnetic response observed in 2D materials was designed and coveted property, like Cr-based VdW crystals showed the great advance and promise to develop spintronic devices via the use of atomically ferromagnetic (thin) materials. However, the very low curie temperature (Tc) of these materials are still an remarkable one and challenging at the room temperature atmosphere for the operation of modern spintronic devices. Recent identification of materials (heterostructure, epitaxial films, metal dihyride, monolayers) are reached towards for the offer of spin-polarized carrier via 2D designed materials at room temperature.

2D Materials for MTJ and transistors: 2D materials for metallic spintronic devices such as MTJs, all-2D MTJ structures (the ferromagnetic (FM) electrodes and the tunnel barrier (TB)) may be developed by the recent concept of integrating two dimensional materials as the atomically-thin tunnel barrier.

Implementation of New Concept of Spin Logic Device: A new concept of magnetoelectric spin-orbit logic device, by two themes (spin-orbit coupling and the magnetoelectric effect), were also expressing its higher energy (in efficiency) than the CMOS techonology. Hence, greater benefit may obtained for 2D materials and their proper heterostructures towards new post silicon spintronics scenarios and their devices.

Concept of 2D Semiconductor Materials with Tunable Bandgap:

Chaves et al., have pointed out the art of bandgap information on 2D materials and their technical applications in electronics, communications, computing, optoelectronics, and sensing. This concept have paved the way for understanding the bandgap and their modification in 2D semiconductor technology (integrated and discrete semiconductor devices) [2].

The role of bandgap is a major one during the discussion on properties (electrical and optical) of the semiconductor. In specific, 2D materials were instructrated to express modified and tunable bandgaps obtained through the control of heterostructuring, strain engineering, number of layers, chemical doping, intercalation, substrate engineering, alloying, external electric field. They have provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies. The highlighted responses are the realization and point out of heterostructues with bandgap (alignment) for devices in various applications. Additionally, 2D materials exhibit enhanced results in ferroelectricity, ferromagnetism, topological effects, superconductivity, so that it will helpful to open the doors of other new opportunities for a wide possibility and novel functional devices.

2D forms of robust CO₂ reduction Photocatalysts:

Steven B. Torrisil et al, have reported on Sustainable and scalable photoelectrocatalysts energy materials are the interested one in present scenarios. Utilized source (sunlight) to power the carbon dioxide (CO₂) photoreduction reaction will be important for energy efficient processes and carbon-neutral power industrial processes [3]. For enhancing the selective surface, potential and tunability for heterostructuring, giving a new fresh landscape of catalysts, the 2D forms are found to be suitable materials. The possiblilty and suitability of these candidate monolayer materials will set for a promising bulk CO₂ photoreduction progress. This research group has identified the visible light absorption support with some inorganic monolayer materials (SiAs, ZnTe, and ZnSe) and some drawbacks in binding, at that point of possibility with CO selectivity was ensured. For further examination, the inorganic monolayer materials acts as specific targets, by expressing the chemical space in material for photoreduction of CO₂ progress towards commercial industries and applications. Enhancement of selective surface reactivity remains a great challenge, and further work is required to understand with defect engineering, chemical changes, and surface area treatments can be utilized to tunable the application performance.

Our SNB team emphasize this research article to enrich our viewer’s knowledge to know mainly about the establishment of three items, (i) 2D graphene materials information of spin relaxation in graphene during the injection and spin transport parameters modification with other variables (independent). A proper examination of graphene mobility, spin life time and charge carrier mobility will lead to conclude about the spin scattering mechanism. (ii) In 2D form of materials, surprising efforts of 2D material interactions, expands the space of possiblilties and further research beyond monolayers to the highlighted massive combinatoric space of 2D material coatings. (iii) The desirable properties of 2D semiconductors for a photoelectrocatalyst progress with a suitable light source towards the sustainable and sufficient energy for the application process.

References:

Ethan C. Ahn, npj 2D Materials and Applications (2020) 4:17 ; https://doi.org/10.1038/s41699-020-0152-0.
A. Chaves, npj 2D Materials and Applications (2020) 4:29 ; https://doi.org/10.1038/s41699-020-00162-4.
Steven B. Torrisi et al, npj 2D Materials and Applications (2020) 4:24 ; https://doi.org/10.1038/s41699-020-0154-y.

--- Dr. K. Rajkumar

The Director,

VET Group of Institutions Villupuram,

Tamil Nadu, India.

Email:drcrystalphd@gmail.com

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