Monolayer two dimensional (2D) transition metal dichalcogenides (TMDs) are recent emerged one among all other optoelectronic material, because of its strong light−matter interactions for direct bandgap. However, these multilayer counter parts exhibited an indirect bandgap resulting to poor quantum yield of photon emission.  Sinu Mathew and his collaborators have been reported on the strong direct bandgap-like photoluminescence (PL) at ∼1.9 eV, a multilayer MoS 2 grown on SrTiO 3 in ACS Nano on November 2020. They found that the intensity  is significantly higher than the observed multilayer MoS 2 /SiO 2 . However, it affects the evolution of band structure in multilayer MoS 2 which causes the higher photo carrier recombination for the direct bandgap. To enable multilayer TMDs for robust optical device applications, these results will provide a suitable platform. In this research, they have demonstrated a strong direct bandgap-like PL emission via  chemical vapor deposi...