Monolayer two dimensional (2D) transition metal dichalcogenides (TMDs) are recent emerged one among all other optoelectronic material, because of its strong light−matter interactions for direct bandgap. However, these multilayer counter parts exhibited an indirect bandgap resulting to poor quantum yield of photon emission.  Sinu Mathew and his collaborators have been reported on the strong direct bandgap-like photoluminescence (PL) at ∼1.9 eV, a multilayer MoS 2 grown on SrTiO 3 in ACS Nano on November 2020. They found that the intensity  is significantly higher than the observed multilayer MoS 2 /SiO 2 . However, it affects the evolution of band structure in multilayer MoS 2 which causes the higher photo carrier recombination for the direct bandgap. To enable multilayer TMDs for robust optical device applications, these results will provide a suitable platform. In this research, they have demonstrated a strong direct bandgap-like PL emission via  chemical vapor deposi...

Prof. A. Ahmed et al., and his collaboration research team at various Universities from USA and India have been reviewed on the multifunctional integrated 2D MXene smart-textile interfaces. This research review was reported in Chemistry of Materials (ACS journal) published on 8 th  December 2020. Next generation electronics have emerged as a unique platform for soft robotics, wearable smart textiles, and virtual reality etc., towards the multifunctional applications. Smart textile based devices played a major vital role in wearable electronics, personal thermal management, real-time m onitoring of healthcare, also have contributed in the areas of energy harvesting to energy storage, sensors etc. It can be seen that, a significant attention has been augmented for the wearable smart textile systems which offers portable sensing, self-powered energy management, and health monitoring for the nanofabrication of textiles with electroactive materials. As the emergence of two-dimensi...

Ethan C. Ahn, from (The University of Texas at San Antonio, USA) deliberately discussed about the Two dimensional (2D) materials at the developing stages of electronic and magnetic properties with morphological materials as spintronic devices. 2D materials have gained more attentive for the utilization of inorganic semiconductors applications in this decades. A worldwide space is been occupied with 2D materials with their unique physical perspectives [ 1 ]. Scientists and technologists were interested to preface and details about the emerging society of 2D nanomaterials and spintronic devices. Highlights of 2D materials and their advantages in spin logic switches, spin valves, and spin transistors were specifically examined. They have also introduce the spin-orbit and spin-valley coupled properties of 2D materials to explore their potential to address the crucial issues of contemporary electronics. Finally, they have highlighted the major challenges in integrating 2D materials into spi...